D1296 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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D1296

Silicon NPN Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

2SD1296

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0

100

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 30mA

1.5

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 15A ,IB= 30mA

2.2

V

ICBO

Collector Cutoff current

VCB= 100V, IE= 0

10

μA

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

10

mA

hFE

DC Current Gain

IC= 15A ; VCE= 2V

1000

30000

Switching Times

ton

Turn-On Time

tstg

Storage Time

tf

Fall Time

1.0

μs

IC = 15A, IB1 = IB2= 30mA;

RL= 4Ω; VCC≈ 60V

5.0

μs

2.0

μs

 hFE-1 classifications

M

L

K

J

1000-3000 2000-5000 4000-10000 8000-30000

SPTECH website：www.superic-tech.com

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