1N60A-T92-K 데이터 시트보기 (PDF) - Unisonic Technologies

부품명

상세내역

제조사

1N60A-T92-K

0.5 Amps, 600 Volts N-CHANNEL MOSFET

Unisonic Technologies 

1N60A

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage

VSD VGS=0V, IS = 0.8A,

Continuous Drain-Source Current

ISD

Pulsed Drain-Source Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR VGS=0V, IS = 0.8A

QRR di/dt = 100A/µs

Note: 1. Repeativity rating: pulse width limited by junction temperature

2. L=92mH, IAS=1.0A, VDD=50V, RG=0Ω, Starting TJ=25℃

3. ISD≤1.0A, di/dt≤100A/µs, VDD≤BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

5. Essentially independent of operating temperature.

Power MOSFET

MIN TYP MAX UNIT

1.6 V

1.2 A

4.8 A

136

ns

0.3

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-091,B

Share Link: