C3850 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3850 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Good Linearity of hFE
·High Collector Current
APPLICATIONS
·Designed for power switching and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
6
A
125
W
2.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SPTECH website：www.superic-tech.com
2SC3850
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