SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD1541
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 2A; IB= 0.75A
VCB= 750V; IE= 0
VCB= 1300V; IE= 0
IC= 2A; VCE= 10V
1.5
V
50 μA
1.0 mA
4
12
VECF
C-E Diode Forward Voltage
IF= 4A
2.2
V
Switching times
tstg
Storage Time
tf
Fall Time
IC= 2A, IB(end)= 0.75A; Lleak= 5μH
7.0 μs
0.75 μs
SPTECH website:www.superic-tech.com
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