C3691 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3691 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A
VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A
VBE(sat) -1 Base-Emitter Saturation Voltage
IC= 3A; IB= 0.15A
VBE(sat) -2 Base-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 60V; IE= 0
VCE= 60V; VBE= -1.5V
Ta=125℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
hFE-3
DC Current Gain
IC= 3A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
hFE-2 classifications
M
L
K
100-200 150-300 200-400
IC= 3A ; IB1= -IB2= 0.15A
RL= 17Ω;VCC≈50V
2SC3691
MIN TYP. MAX UNIT
60
V
0.3
V
0.5
V
1.2
V
1.5
V
10 μA
10 μA
1.0 mA
10 μA
100
100 200 400
60
150
MHz
70
pF
0.3 μs
1.5 μs
0.3 μs
SPTECH website：www.superic-tech.com
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