MUR10005CTR 데이터 시트보기 (PDF) - New Jersey Semiconductor
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MUR10005CTR Datasheet PDF : 3 Pages
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J.
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon Super Fast
Recovery Diode
Features
• Hsgh Surge Capability
• Types up to 600 V VRRf,,
O'nc.
TELEPHONE: (973) 376-2922
(212)227-6005
MUR10005CTthru
MU10020CTR
VRRM *50 V - 600 V
IF-100A
Twin Tower Package
Maximum ratings, at T = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR100rj5CT (R) MUR10010CT (R) MUR10020CT (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
50
100
200
35
70
140
50
100
200
140 "C
100
100
100
Surge non-repetitive forward
current, HaJf Sine Wave
I, M T c = 2 5 :C, t = 8,3ms
Operating temperature
Storage temperature
T,...
400
-40 to 175
-40 to 175
400
•40 to 175
-40 to 175
400
-40 to 175
C
-40 to 175
c;
Electrical characteristics, at Tj = 25 *C, unless otherwise specified
Parameter
Symbol
Conditions
MUR10005CT (R) MUR10010CT (R) MUR1Q020CT (R) Unit
Diode forward voltage
V,
I, = 5 0 A , T, = 25 "C
1.3
1.3
1.3
Reverse current
Vi, ^ 50 V. T, = 25 *C
25
25
25
/. T, = 125:C
1
1
1
mA
Recovery Time
Maximum reverse recovery
lime
I, =0.5 A, I,,=1.0A.
75
75
75
Quality Semi-Conductors
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