MURF820G 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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MURF820G

8.0Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

MURF820G thru MURF880G

Pb Free Plating Product

MURF820G thru MURF880G

Pb

8.0Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers

Feature

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Inverter/communication/LED SMPS

TV receiver,monitor/set top box etc..

Switching mode power supply/UPS

ITO-220AC

.419(10.66)

.387(9.85)

.167(3.73)

.122(3.10)

Unit : inch (mm)

.196(5.00)

.163(4.16)

.118(3.00)

.079(2.00)

Mechanical Data

Case: Molded plastic Isolated/Insulated ITO-220AC

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.03 grams approximately

.038(0.96)

.019(0.50)

.025(0.65)MAX

.1(2.54)

.1(2.54)

MUR series with TO-220AC(Heatsink) package

MURF series with ITO-220AC(Insulated) package

MURS series with TO-263AC(D2PAK) package

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MURF820G MURF840G MURF860G MURF880G

UNIT

Maximum recurrent peak reverse voltage

VRRM

200

Maximum RMS voltage

VRMS

140

Maximum DC blocking voltage

VDC

200

Maximum average forward rectified current at TC = 100 °C IF(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

IFSM

400

600

280

420

400

600

8.0

100

850

V

595

V

850

V

A

A

Maximum slope of reverse recovery current

IF = 2.0 A, VR = 30 V, dI/dt = 20 µs

Operating junction and storage temperature range

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

dI/dt

TJ, TSTG

VAC

60

- 40 to + 150

1500

A/μs

°C

V

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

Maximum instantaneous forward

voltage (1)

8.0 A

Maximum DC reverse current at

rated DC blocking voltage

Maximum reverse recovery time

Maximum recovered stored charge

TJ = 25 °C

TJ = 125 °C

IF = 1.0 A, VR = 30 V,

dI/dt = 50 A/µs, Irr = 10 % IRM

IF = 2.0 A, VR = 30 V,

dI/dt = 20 A/µs

Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle

SYMBOL MURF820G MURF840G MURF860G MURF880G

UNIT

VF

0.98

IR

1.3

1.7

5

100

1.8

V

µA

trr

35

75

ns

Qrr

700

nC

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MURseries MURF series MURS series UNIT

Typical thermal resistance from junction to case

Typical thermal resistance from junction to air

RθJC

2.0

4.8

2.0

°C/W

RθJA

20

-

20

°C/W

Rev.07C

© 2006 Thinki Semiconductor Co., Ltd.

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