PMK30EP 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved

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PMK30EP

P-channel TrenchMOS extremely low level FET

Nexperia B.V. All rights reserved 

PMK30EP

P-channel TrenchMOS extremely low level FET

Rev. 04 — 25 October 2010

Product data sheet

1. Product profile

1.1 General description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

„ Low conduction losses due to low

on-state resistance

1.3 Applications

„ Battery management

„ Load switching

1.4 Quick reference data

Table 1.

Symbol

VDS

ID

Quick reference data

Parameter

drain-source voltage

drain current

Ptot

total power dissipation

Static characteristics

RDSon

drain-source on-state

resistance

Dynamic characteristics

QGD

gate-drain charge

Conditions

25 °C ≤ Tj ≤ 150 °C

Tsp = 25 °C; VGS = -10 V;

see Figure 1; see Figure 3

Tsp = 25 °C; see Figure 2

VGS = -10 V; ID = -9.2 A;

Tj = 25 °C; see Figure 9

VGS = -10 V; ID = -9.2 A;

VDS = -15 V; Tj = 25 °C;

see Figure 11; see Figure 12

Min Typ Max Unit

-

-

-30 V

-

-

-14. A

9

-

-

6.9 W

-

16 19 mΩ

-

7-

nC

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