PMK30EP 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
부품명
상세내역
제조사
PMK30EP Datasheet PDF : 13 Pages
| |||
Nexperia
PMK30EP
P-channel TrenchMOS extremely low level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
drain
D
drain
D
drain
D
drain
3. Ordering information
Simplified outline
8
5
1
4
SOT96-1 (SO8)
Graphic symbol
D
G
S
001aaa025
Table 3. Ordering information
Type number
Package
Name
PMK30EP
SO8
4. Limiting values
Description
plastic small outline package; 8 leads; body width 3.9 mm
Version
SOT96-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tsp = 25 °C; VGS = -10 V; see Figure 1;
see Figure 3
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tsp = 100 °C; VGS = -10 V; see Figure 1
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tsp = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Tsp = 25 °C
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Min Max Unit
-
-30 V
-
-30 V
-20 20 V
-
-14.9 A
-
-7.5 A
-
-28.8 A
-
6.9 W
-55 150 °C
-55 150 °C
-
-5.8 A
-
-23 A
PMK30EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 25 October 2010
© Nexperia B.V. 2017. All rights reserved
2 of 13
Share Link: 