PMK30EP 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PMK30EP Datasheet PDF : 13 Pages
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Nexperia
PMK30EP
P-channel TrenchMOS extremely low level FET
−30
ID
(A)
−20
VGS (V) = −7
003aab619
−5 −4.5
−4
−3.5
−30
ID
(A)
−20
003aab621
−10
−10
−3
Tj = 150 °C 25 °C
−2.8
0
0
−0.2
−0.4
−0.6
−0.8
VDS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
0
0
−1
−2
−3
−4
VGS (V)
VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
4
VGS(th)
(V)
3
2
1
003aab626
max
typ
min
−10−3
ID
(A)
−10−4
−10−5
003aab625
min
typ
max
0
−60
0
60
120
180
Tj (°C)
ID = -1 mA; VDS = VGS
Fig 7. Gate-source threshold voltage as a function of
junction temperature
−10−6
0
−1
−2
−3
−4
VGS (V)
Tj = 25 °C; VDS = -5 V
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
PMK30EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 25 October 2010
© Nexperia B.V. 2017. All rights reserved
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