PMK30EP 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved

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PMK30EP

P-channel TrenchMOS extremely low level FET

Nexperia B.V. All rights reserved 

Nexperia

PMK30EP

P-channel TrenchMOS extremely low level FET

2

a

1.6

1.2

0.8

0.4

0

−60

0

003aab627

60

120

180

Tj (°C)

100

RDSon

(mΩ)

80

60

VGS (V) = −3

003aab620

−3.5

40

−4

−4.5

20

−5

0

0

−10

Tj = 25 °C

−20

−30

ID (A)

Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature

−10

VGS

(V)

VDS = −15 V

ID = −9.2 A

Tj = 25 °C

−7.5

003aab624

−5

−2.5

0

0

12.5

25

37.5

50

QG (nC0

VDS = -15 V; ID = -9.2 A; Tj = 25 °C

Fig 11. Gate-source voltage as a function of gate

charge; typical values

Fig 10. Drain-source on-state resistance as a function

of drain current; typical values

VDS

ID

VGS(pl)

VGS(th)

VGS

QGS1 QGS2

QGS

QGD

QG(tot)

003aaa508

Fig 12. Gate charge waveform definitions

PMK30EP

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 04 — 25 October 2010

© Nexperia B.V. 2017. All rights reserved

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