Nexperia
PMK30EP
P-channel TrenchMOS extremely low level FET
104
C
(pF)
103
003aab623
Ciss
Coss
Crss
−25
IS
(A)
−20
−15
−10
−5
003aab622
Tj = 150 °C
25 °C
102
−10−1
−1
−10
−102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0
−0.4
−0.8
−1.2
−1.6
VSD (V)
VGS = 0 V
Fig 14. Source current as a function of source-drain
voltage; typical values
PMK30EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 25 October 2010
© Nexperia B.V. 2017. All rights reserved
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