PMPB11EN 데이터 시트보기 (PDF) - Nexperia B.V. All rights reserved
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PMPB11EN Datasheet PDF : 15 Pages
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Nexperia
PMPB11EN
30 V, N-channel Trench MOSFET
25
ID
(A)
20
3V
VGS = 5 V 2.9 V
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2.7 V
10-3
ID
(A)
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10-4
15
min typ
max
2.5 V
10
10-5
5
2.3 V
2.1 V
0
0
1
2
3
4
VDS (V)
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0.0
0.5
1.0
1.5
2.0
2.5
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
50
RDSon
(mΩ)
40
2.5 V
VGS = 2.75 V
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3.0 V
50
RDSon
(mΩ)
40
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30
30
3.25 V
20
3.5 V
20
5.0 V
10
4.0 V
10
4.5 V
Tj = 150 °C
Tj = 25 °C
0
0
5
10
15
20
25
ID (A)
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
2
4
6
8
VGS (V)
ID = 8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB11EN
Product data sheet
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12 July 2018
© Nexperia B.V. 2018. All rights reserved
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