MMBT5087 데이터 시트보기 (PDF) - Yea Shin Technology Co., Ltd

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MMBT5087

Low Noise Transistor

Yea Shin Technology Co., Ltd 

DEVICE CHARACTERISTICS

MMBT5087

10

7.0

5.0

3.0

2.0 1.0mA

1.0

10 20

TYPICAL NOISE CHARACTERISTICS

(V CE = – 5.0 Vdc, T A = 25°C)

10.0

BANDWIDTH = 1.0 Hz

7.0

R S~ ~ 0

5.0

IC=10 µA

3.0

2.0

30µA

1.0

100µA

0.7

300µA

0.5

0.3

0.2

I =1.0mA

C

BANDWIDTH = 1.0 Hz

R S ~ ~

300µA

100µA

30µA

10µA

50 100 200

500 1.0k 2.0k

5.0k 10k

0.1

10 20

50 100 200 500 1.0k 2.0k 5.0k 10k

f, FREQUENCY (Hz)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

Figure 2. Noise Current

NOISE FIGURE CONTOURS

(V CE = – 5.0 Vdc, T A = 25°C)

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10

BANDWIDTH = 1.0 Hz

0.5 dB

1.0 dB

2.0dB

3.0dB

5.0dB

20 30

50 70 100

200 300 500 700 1.0K

I C , COLLECTOR CURRENT (µA)

Figure 3. Narrow Band, 100 Hz

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10

BANDWIDTH = 1.0 Hz

0.5dB

1.0dB

2.0 dB

3.0dB

5.0 dB

20 30 50 70 100

200 300 500 700 1.0K

I C , COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

1.0M

500k

10 Hz to 15.7kHz

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10

0.5dB

1.0dB

2.0dB

3.0 dB

5.0 dB

20 30

50 70 100

200 300 500 700 1.0K

I C , COLLECTOR CURRENT (µA)

Figure 5. Wideband

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3

Noise Figure is Defined as:

( –––––––––––––––) NF = 20 log 10

e

n

2

+

4KTRS

+

I

2

n

R

2

S

1/ 2

4KTR S

e n = Noise Voltage of the Transistor referred to the input. (Figure 3)

I n = Noise Current of the Transistor referred to the input. (Figure 4)

K = Boltzman’s Constant (1.38 x 10 –23 j/°K)

T = Temperature of the Source Resistance (°K)

R s = Source Resistance ( Ω )

REV.02 20120403

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