MMBT5087 데이터 시트보기 (PDF) - Yea Shin Technology Co., Ltd

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MMBT5087

Low Noise Transistor

Yea Shin Technology Co., Ltd 

PACKAGE OUTLINE & DIMENSIONS

MMBT5087

104

V = 30 V

CC

103

102

I CEO

101

I

CBO

AND

100

I @ V = 3.0 V

CEX

BE(off)

10–1

10–2

–4 –2

0 +20 +40 +60 +80 +100 +120 +140 +160

T J , JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by

the model as shown in Figure 16. Using the model and the

device thermal response the normalized effective transient

thermal resistance of Figure 14 was calculated for various

duty cycles.

To find Z θJA(t) , multiply the value obtained from Figure 14 by

the steady state value R θJA .

Example:

Dissipating 2.0 watts peak under the following conditions:

t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)

Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the

reading of r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

http://www.yeashin.com

6

REV.02 20120403

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