ES3CB 데이터 시트보기 (PDF) - TSC Corporation
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ES3CB Datasheet PDF : 8 Pages
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ES3AB - ES3JB
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
Junction-to-lead thermal resistance
RӨJL
24
Junction-to-ambient thermal resistance
RӨJA
84
Junction-to-case thermal resistance
RӨJC
26
Thermal Performance Note: Units mounted on recommended PCB (10mm x 10mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode (1)
ES3AB
ES3BB
ES3CB
ES3DB
ES3FB
ES3GB
ES3HB
ES3JB
ES3AB
ES3BB
ES3CB
ES3DB
ES3FB
ES3GB
ES3HB
ES3JB
ES3AB
ES3BB
ES3CB
ES3DB
ES3FB
ES3GB
ES3HB
ES3JB
ES3AB
ES3BB
ES3CB
ES3DB
ES3FB
ES3GB
ES3HB
ES3JB
CONDITIONS
IF = 1.5A,TJ = 25°C
IF = 3.0A,TJ = 25°C
IF = 1.5A,TJ = 125°C
IF = 3.0A,TJ = 125°C
SYMBOL
VF
VF
VF
VF
TYP
0.80
0.90
1.11
0.86
0.98
1.24
0.66
0.73
0.85
0.73
0.83
0.99
Reverse current @ rated VR per diode (2)
Junction capacitance
ES3AB
ES3BB
ES3CB
ES3DB
ES3FB
ES3GB
ES3HB
ES3JB
TJ = 25°C
TJ = 125°C
1 MHz, VR=4.0V
-
IR
-
46
CJ
41
34
Reverse recovery time
Notes:
IF=0.5A ,IR=1.0A
IRR=0.25A
trr
-
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
UNIT
°C/W
°C/W
°C/W
MAX UNIT
0.92
V
1.04
V
1.30
V
1.00
V
1.13
V
1.45
V
0.75
V
0.85
V
0.98
V
0.84
V
0.95
V
1.13
V
10
µA
100
µA
-
pF
-
pF
-
pF
35
ns
Version:B1706
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