BFS483(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFS483
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFS483

NPN Silicon RF Transistor

For low-noise, high-gain broadband amplifier

at collector currents from 2 mA to 28 mA

fT = 8 GHz

F = 1.2 dB at 900 MHz

Two (galvanic) internal isolated

Transistors in one package

C1

E2

B2

6

5

4

4

5

6

3

2

1

VPS05604

TR2

TR1

1

2

3

B1

E1

C2

EHA07196

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFS483

Marking

RHs

Pin Configuration

Package

1=B 2=E 3=C 4=B 5=E 6=C SOT363

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS
40 °C 1)

Junction temperature

Ambient temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

12

V

20

20

2

65

mA

5

450

mW

150

°C

-65 ... 150

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

245

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Jun-27-2001

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