ZTX576 데이터 시트보기 (PDF) - Zetex => Diodes

부품명

상세내역

제조사

ZTX576

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Zetex => Diodes 

PNP SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 1 – APRIL 94

FEATURES

* 200 Volt VCEO

* 1 Amp continuous current

* Ptot= 1 Watt

ZTX576

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

-200

-200

-5

-2

-1

1

-55 to +200

UNIT

V

V

V

A

A

W

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -200

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO -200

V

IC=-10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO -5

V

IE=-100µA

Collector Cut-Off

ICBO

Current

-0.1 µA

VCB=-160V

Emitter Cut-Off Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.1 µA

-0.3 V

VEB=-4V

IC=-100mA, IB=-10mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1

V

IC=-100mA, IB=-10mA*

Base-Emitter

Turn-on Voltage

VBE(on)

-1

V

IC=-100mA, VCE=-10V*

Static Forward Current hFE

50

Transfer Ratio

50

Transition

Frequency

fT

100

IC=-10mA, VCE=-10V*

300

IC=-300mA, VCE=-10V*

MHz IC=-50mA, VCE=-10V

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3-204

Share Link: