ZTX758STZ 데이터 시트보기 (PDF) - Diodes Incorporated.
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ZTX758STZ Datasheet PDF : 7 Pages
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A Product Line of
Diodes Incorporated
ZTX758
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
-400
—
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-400
—
Emitter-Base Breakdown Voltage
BVEBO
-7
—
Collector Cut-off Current
ICBO
—
—
Emitter Cut-off Current
IEBO
—
—
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
—
—
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
VBE(sat)
—
—
VBE(on)
—
—
50
hFE
50
—
40
Current Gain-Bandwidth Product (Note 9)
fT
50
—
Output Capacitance (Note 9)
Turn-On Times
Turn-Off Times
Cobo
—
—
ton
—
140
toff
—
2000
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Max
—
—
—
-100
-100
-300
-250
-500
-0.9
-0.9
—
—
20
—
—
Unit
V
V
V
nA
nA
mV
V
V
—
MHz
pF
ns
ns
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -320V
VEB = -6V
IC = -20mA, IB = -1mA
IC =-50mA, IB = -5mA
IC =-100mA, IB = -10mA
IC = -100mA, IB = -100mA
IC = -100mA, VCE = -5V
IC = -1mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -200mA, VCE = -10V
VCE = -20V, IC = -20mA
f = 20MHz
VCB = -20V. f = 1MHz
IC = -100mA, IB1 = 10mA,
IB2 = -20mA, VC = -100V
ZTX758
Document number: DS33299 Rev. 2 - 2
4 of 7
www.diodes.com
August 2013
© Diodes Incorporated
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