ASI10719 데이터 시트보기 (PDF) - Advanced Semiconductor

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ASI10719

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

ERROR! REFERENCE SOURVCHE NBO1T0F0O-U1N2D.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

hFE

VCE = 5.0 V

IC = 5.0 A

MINIMUM TYPICAL MAXIMUM UNITS

10

100

---

COB

VCB = 12.5 V

f = 1.0 MHz

390

pF

PG

VCC = 12.5 V

POUT = 100 W

f = 175 MHz

6.0

ηC

PIN = 25 W

60

dB

%

IMPEDANCE DATA

FREQ

175 MHz

ZIN (Ω)

1.05 – j0.9

ZCL (Ω)

0.5 – j1.0

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

2/2

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