MMFT3055ET1 데이터 시트보기 (PDF) - Motorola => Freescale

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MMFT3055ET1

Medium Power Field Effect Transistor

Motorola => Freescale 

MMFT3055E

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA)

Zero Gate Voltage Drain Current, (VDS = 60 V, VGS = 0)

Gate–Body Leakage Current, (VGS = 20 V, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)

Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.85 A)

Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1.7 A)

Forward Transconductance, (VDS = 15 V, ID = 0.85 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 20 V,

VGS = 0,

f = 1 MHz)

SWITCHING CHARACTERISTICS

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 25 V, ID = 0.85 A

VGS = 10 V, RG = 50 ohms,

RGS = 25 ohms)

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VDS = 48 V, ID = 1.7 A,

VGS = 10 Vdc)

See Figures 15 and 16

SOURCE DRAIN DIODE CHARACTERISTICS(1)

Forward On–Voltage

IS = 1.7 A, VGS = 0

Forward Turn–On Time

Reverse Recovery Time

IS = 1.7 A, VGS = 0,

dlS/dt = 400 A/µs,

VR = 30 V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ton

trr

Min

Typ

Max

Unit

60

—

—

Vdc

—

—

10

µAdc

—

—

100

nAdc

2

—

4.5

Vdc

—

—

0.15

Ohms

—

—

0.34

Vdc

—

2.2

—

mhos

—

430

—

—

225

—

pF

—

40

—

—

15

—

—

22

—

ns

—

31

—

—

49

—

—

12.5

—

—

2

—

nC

—

4.5

—

—

0.8

—

Vdc

Limited by stray inductance

—

50

—

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

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