BF823 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BF823

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

High Voltage Transistors

Characteristics (Tj = 25/C)

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- VCE = 20 V, - IC = 25 mA

hFE

Gain-Bandwidth Product – Transitfrequenz

- VCE = 10 V, - IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 30 V, IE = ie = 0, f = 1 MHz

CCB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BF 821, BF 823

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

50

–

–

60 MHz

–

–

–

1.6 pF

–

RthA

420 K/W 2)

BF 820, BF 822

Marking - Stempelung

BF 821 = 1W

BF 823 = 1Y

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

9

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