RMWD24001 데이터 시트보기 (PDF) - Fairchild Semiconductor

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RMWD24001

21–26.5 GHz Driver amplifier MMIC

Fairchild Semiconductor 

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal

conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with

gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT

devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of

bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of

wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges

through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for

appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap

between the chip and the substrate material.

DRAIN DRAIN DRAIN DRAIN

SUPPLY SUPPLY SUPPLY SUPPLY

Vd1

Vd2

Vd3

Vd4

RF IN

MMIC CHIP

RF OUT

GROUND

(Back of the Chip)

GATE SUPPLY GATE SUPPLY

Vg1&4

Vg2&3

OUTPUT POWER

DETECTOR VOLTAGE

Vdet*

Note:

Detector delivers 0.1V DC into 3kΩ load resistor for > +7dBm output power. If output level detection

is not desired, do not make connection to detector bond pad.

Figure 1. Functional Block Diagram

©2004 Fairchild Semiconductor Corporation

RMWD24001 Rev. D

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