SI4214DDY-T1-E3 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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SI4214DDY-T1-E3 Datasheet PDF : 9 Pages
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SI4214DDY-T1-E3
www.VBsemi.tw
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID= 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On -State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 5 A
Forward Transconductanceb
gfs
VDS = 15 V, ID = 8 A
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, ID = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ta
tb
VDS = 15 V, VGS = 4.5 V, ID = 8 A
f = 1 MHz
VDD = 15 V, RL = 3
ID 5 A, VGEN = 4.5 V, Rg = 1
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 2 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
20
0.5
Typ.
3.0
- 5.2
27
Max.
Unit
2.5
100
1
10
0.016
0.020
V
mV/°C
V
nA
µA
A
S
660
140
pF
86
14.5
22
7.1
11
nC
1.9
2.7
2.6
5.2
14
28
45
80
18
35
12
24
ns
7
14
10
20
15
30
7
14
2.8
A
30
0.77
1.1
V
17
34
ns
9
18
nC
10
nS
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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