P0AP03LCG 데이터 시트보기 (PDF) - Unspecified
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P0AP03LCG Datasheet PDF : 8 Pages
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P0AP03LCG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
28mΩ @VGS = -10V
ID
-6.5A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
-6.5
-5.2
IDM
-20
Avalanche Current
IAS
-19
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C
PD
2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
61
Junction-to-Case
RqJC
18
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
REV 1.0
1
2017/2/20
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