3N80ZG-TF1-T 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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3N80ZG-TF1-T Datasheet PDF : 9 Pages
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3N80ZG-TF1-T
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 12a - Unclamped Inductive Test Circuit
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VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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