MMBTA43 데이터 시트보기 (PDF) - Dongguan City Niuhang Electronics Co.LTD
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MMBTA43 Datasheet PDF : 3 Pages
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Niu Hang
Electronic Co. Ltd
MMBTA42,MMBTA43
NPN Silicon General Purpose Transistors
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage(Note 3)
(IC=1.0mAdc,IB=0)
Symbol
V (BR)CEO
MMBTA42
Min.
300
MMBTA43
200
Collector-Base Breakdown Voltage
(IC=100µΑdc,IE=0)
V (BR)CBO
MMBTA42
300
MMBTA43
200
Emitter-Base Breakdown Voltage
(IE=100µΑdc,IC=0)
V (BR)EBO
6.0
Collector Cutoff Current
(VCB=200Vdc,IE=0)
(VCB=160Vdc,IE=0)
Emitter Cutoff Current
(VEB=6Vdc,IC=0)
(VEB=4Vdc,IC=0)
I CBO
MMBTA42
-
MMBTA43
-
I EBO
MMBTA42
-
MMBTA43
-
DC Current Gain
(IC=1mA,VCE=10Vdc)
(IC=10mA,VCE=10Vdc)
h FE
25
40
(IC=30mA,VCE=10Vdc)
40
Collector-Emitter Saturation Voltage (IC=20mAdc,IB=2mAdc)
Base-Emitter Saturation Voltage (IC=20mAdc,IB=2mAdc)
V CE(S)
-
V BE(S)
-
Current-Gain-Bandwidth Product(Ic=10mAdc,VCE=20Vdc,f=100MHz)
fT
50
Ccb
Collector-Base Capacitance(VCB=20.0Vdc, IE=0, f=1.0MHz)
MMBTA42
-
MMBTA43
-
Note: 3.Pulse Width<300us;Duty Cycle<2.0%.
Specification
For Approval
Typ.
Max.
-
-
-
-
-
-
-
-
-
-
-
100
-
100
-
100
-
100
-
-
-
300
-
-
-
0.5
-
0.9
-
-
-
3
-
4
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
MHz
pF
Http://www.nhel.com.cn
Data: 2014/10/20 Rev.: A/1
Page: 2 of 3
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