S8050 데이터 시트보기 (PDF) - SUNMATE electronic Co., LTD

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S8050

SILICON EPITAXIAL PLANAR TRANSISTOR

SUNMATE electronic Co., LTD 

Electrical Characteristics TA = 25°C unless otherwise specified

Parameter

Symbol Test conditions

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

Collector cut-off current

ICBO

VCB=40V,IE=0

Collector cut-off current

ICEO

VCE=20V,IB=0

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

VEB=5V,IC=0

VCE=1V,IC=50mA

VCE=1V,IC=500mA

IC=500mA, IB= 50mA

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB= 50mA

Transition frequency

fT

VCE=6V, IC= 20mA

f=30MHz

MIN TYP MAX UNIT

40

V

25

V

5

V

0.1 μA

0.1 μA

0.1 μA

120

350

50

0.6 V

1.2 V

150

MHz

Rank

Range

L

120-200

H

200-350

2 of 3

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