S9014 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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S9014 Datasheet PDF : 3 Pages
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S9014
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1 μA
Collector cut-off current
ICEO
VCE=35V,IB=0
0.1 μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
DC current gain
hFE
VCE=5V,IC=1mA
200
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA
0.1 μA
1000
0.3 V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
1
V
Transition frequency
VCE=6V, IC= 20mA
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
200-450
H
450-1000
Revision:20170701-P1
http://www.lgesemi.com
mail:lge@lgesemi.com
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