BDT82 데이터 시트보기 (PDF) - Comset Semiconductors

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BDT82

SILICON POWER TRANSISTOR

Comset Semiconductors 

PNP BDT82 – BDT84 – BDT86 – BDT88

NPN BDT81 – BDT83 – BDT85 – BDT87

-VBE

Base-Emitter voltage (1) -IC=5 A , -VCE=4 V

BDT82

BDT84

BDT86

BDT88

- - 1.5 V

Symbol

-IS/B

fT

ton

Toff

Ratings

Test Condition(s)Sec

Second breakdown collector

current

Transition frequency

Turn-on time

Turn-off time

-VCE=50 V , tP = 100 ms

-VCE=10 V , -IC=0.5 A , f=1 MHz

-IC=7 A , -IB1 = IB2 =0.7 A

-IC=7 A , -IB1 = IB2 =0.7 A

(1) Pulse Duration = 300 µs, δ <= 2%

MECHANICAL DATA CASE TO-220

DIMENSIONS

mm

inches

A

9,86

0,39

B

15,73

0,62

C

13,37

0,52

D

6,67

0,26

E

4,44

0,17

F

4,21

0,16

G

2,99

0,11

H

17,21

0,68

L

1,29

0,05

M

3,6

0,14

N

1,36

0,05

P

0,46

0,02

R

2,1

0,08

S

5

0,19

T

2,52 0,098

U

0,79

0,03

Pin 1 :

Pin 2 :

Pin 3 :

Base

Collector

Emitter

Min Typ Mx Unit

2.5 - -

A

- 20 - MHz

- -1

-

-

2

µs

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

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