STQ1NE10L(2002) 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STQ1NE10L
(Rev.:2002)

N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET™ POWER MOSFET

STMicroelectronics 

STQ1NE10L

THERMAL DATA

Rthj-Lead Thermal Resistance Junction-Lead

Max

40

Rthj-amb Thermal Resistance Junction-ambient

Max

125

Tl

Maximum Lead Temperature For Soldering Purpose

Typ

260

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

100

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 5 V

ID = 0.5 A

ID = 0.5 A

Min.

1

Typ.

0.30

0.35

Max.

2.5

0.40

0.45

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15V

ID = 0.5 A

VDS = 25V f = 1 MHz VGS = 0

Min.

Typ.

2

345

45

20

Max.

Unit

S

pF

pF

pF

2/9

Share Link: