STD35NF06LT4 데이터 시트보기 (PDF) - STMicroelectronics

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STD35NF06LT4

N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD35NF06L

(TCASE= 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source

on-resistance

Test conditions

Min. Typ. Max. Unit

ID = 250 µA, VGS =0

60

VDS = 60 V

VDS = 60 V, TC = 125 °C

VGS = ± 16 V

VDS = VGS, ID = 250 µA

1

VGS = 10 V, ID = 17.5 A

VGS = 4.5 V, ID = 17.5 A

V

1

µA

10

µA

±100 nA

2.5

V

0.014 0.017 Ω

0.016 0.020 Ω

Table 5.

Symbol

Dynamic

Parameter

Test conditions

Min.

gfs (1)

Forward

transconductance

VDS = 15 V, ID = 17.5 A

-

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

-

VGS = 0

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 30 V, ID = 27.5 A

RG = 4.7 Ω VGS = 4.5 V

-

(see Figure 13)

VDD = 48 V, ID = 55 A,

VGS = 4.5 V, RG = 4.7 Ω -

(see Figure 14)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Typ.

28

1700

305

105

20

100

40

20

25

5

10

Max.

33

Unit

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

4/14

Doc ID 7662 Rev 5

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