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02N60F

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Hi-Sincerity
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
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Match & Start : 02N60F
Stanson
STANSON TECHNOLOGY
N-Channel MOSFET 2.0A
Siemens
Siemens AG
SIPMOS® Power Transistor
Siemens
Siemens AG
SIPMOS® Power Transistor
GTM
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Infineon
Infineon Technologies
Fast IGBT in NPT-technology
Champion
Champion Microelectronic
POWER FIELD EFFECT TRANSISTOR
Champion
Champion Microelectronic
POWER FIELD EFFECT TRANSISTOR
Champion
Champion Microelectronic
POWER FIELD EFFECT TRANSISTOR
Hi-Sincerity
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd
POWER FILED EFFECT TRANSISTOR
ZPSEMI
ZP Semiconductor
TO-220-3L Plastic-Encapsulate MOSFETS
VBSEMI
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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