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NE5520279A-T1A

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NEC => Renesas Techn...
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CEL
California Eastern Laboratories.
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
PDF
NEC
NEC => Renesas Technology
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
PDF
Match & Start : NE5520279A-T1A
CEL
California Eastern Laboratories.
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
NEC
NEC => Renesas Technology
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
CEL
California Eastern Laboratories.
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
NEC
NEC => Renesas Technology
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
CEL
California Eastern Laboratories.
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
NEC
NEC => Renesas Technology
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
CEL
California Eastern Laboratories.
NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
CEL
California Eastern Laboratories.
NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
Philips
Philips Electronics
LVDT signal conditioner
Philips
Philips Electronics
LVDT signal conditioner
Philips
Philips Electronics
LVDT signal conditioner
1
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