![CEL](/logo/CEL.png)
California Eastern Laboratories.
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
![NEC](/logo/NEC.png)
NEC => Renesas Technology
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
![CEL](/logo/CEL.png)
California Eastern Laboratories.
3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
![NEC](/logo/NEC.png)
NEC => Renesas Technology
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
![CEL](/logo/CEL.png)
California Eastern Laboratories.
NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
![CEL](/logo/CEL.png)
California Eastern Laboratories.
NEC'S 3.2 V, 3 W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
![Philips](/logo/Philips.png)
Philips Electronics
LVDT signal conditioner
![Philips](/logo/Philips.png)
Philips Electronics
LVDT signal conditioner
![Philips](/logo/Philips.png)
Philips Electronics
LVDT signal conditioner