ZTX413 데이터 시트보기 (PDF) - Zetex => Diodes

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ZTX413

NPN SILICON PLANAR AVALANCHE TRANSISTOR

Zetex => Diodes 

ZTX415

TYPICAL CHARACTERISTICS

180

1. >4x10Operations Without Failure

160

2. 10%Operations To Failure

140

3. 10!Operations To Failure

120

100

3.

80

2.

60

40

20

0

0

1.

20 40 60 80 100 120 140 160 180

Pulse Width (ns)

Maximum Avalanche Current

v Pulse Width

100

80

60

40

20

0

100µA

175°C

V+- =10V

25°C

-55°C

1mA

10mA 100mA

1A

Collector Current

hFE v IC

40

30

V+ = 250V

20

V+ = 200V

10

0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature (°C)

IUSB v Temperature

for the specified conditions

220

200

Risetime of Base

180

Drive Current = 5mA/ns

160

140

I* =50mA

120

100

100p

1n

I* =100mA

I* =200mA

10n

100n

Collector-Emitter Capacitance (F)

Minimum starting voltage

as a function of capacitance

180

175

I* =60mA

170

165

I* =100mA

160

I* =200mA

155

C=620pF

150

145

1

10

Risetime of Base Drive (mA/ns)

Minimum starting voltage

as a function of drive current

160

150

140

C = 620pF

120

100

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature (°C)

Minimum starting voltage

as a function of temperature

3-172

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