ZTX325 데이터 시트보기 (PDF) - Zetex => Diodes

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ZTX325

NPN SILICON PLANAR RF TRANSISTOR

Zetex => Diodes 

ZTX325

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Noise Figure

N

5.0 dB f=500MHz, VCE=5V, IC=2mA,

RS=50Ω

Intermodulation

dim

Distortion

-53

dB IC=14mA, VCE=6V, f=217MHz

V0=100mV, RL=37.5Ω,

f1=183MHz, f2=200MHz

Output Power

(at Tcase=25°C)*

PO

175

mW VCE=13.5V, IC=22.5mA

Pin=25mW, f=500MHz

*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.

TYPICAL CHARACTERISTICS

3

2

1

0

0.1

f=400MHz

VCE=10V

VCE=5V

1

10

100

1000

IC - Collector Current (mA)

fT v IC

80

60

VCE=10V

40

20

1µ

10µ

100µ

1m

10m

100m

IC - Collector Current (A)

hFE v IC

f=1MHz

2.0

1.5

1.0

0.5

0

10

20

30

VCE - (V)

CRE v VCE

3-162

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