D44H11 데이터 시트보기 (PDF) - STMicroelectronics

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D44H11

Complementary power transistors

STMicroelectronics 

D44H8, D44H11, D45H8, D45H11

2

Electrical characteristics

Electrical characteristics

Note:

Tcase = 25 °C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

VCEO(sus)(1)

Collector-emitter

sustaining voltage (IB = 0)

IC = 100 mA

D44H8 - D45H8

D44H11 - D45H11

60

-

80

V

ICES

IEBO

VCE(sat)(1)

Collector cut-off current

(VBE = 0)

VCE = rated VCEO

Emitter cut-off current

(IC = 0)

VEB = 5 V

Collector-emitter saturation

voltage

IC = 8 A

IB = 0.4 A

-

10 µA

-

100 µA

-

1

V

VBE(sat)(1)

Base-emitter saturation

voltage

IC = 8 A

IB = 0.8 A

-

1.5 V

hFE(1)

DC current gain

IC = 2 A_

VCE = 1 V 60

-

IC = 4 A_ _ VCE = 1 V 40

-

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

For PNP types voltage and current values are negative.

Doc ID 4213 Rev 5

3/8

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