BFQ74 데이터 시트보기 (PDF) - Siemens AG

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BFQ74

NPN Silicon RF Transistor

Siemens AG 

BBFFQQ 7744

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 5 mA, VCE = 10 V, f = 200 MHz

IC = 15 mA, VCE = 10 V, f = 200 MHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Output capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Noise figure

IC = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75 Ω

IC = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50 Ω

IC = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt

Power gain

IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω

IC = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50 Ω

Transducer gain

IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω

Linear output voltage

two-tone intermodulation test

IC = 25 mA, VCE = 10 V, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω

Third order intercept point

IC = 25 mA, VCE = 10 V, f = 800 MHz

fT

–

–

Ccb

–

Cce

–

Cibo

–

Cobs

–

F

–

–

–

Gma1)

–

Gms2)

–

I S21e I 2 –

Vo1 = Vo2 –

IP3

–

4.4 –

6

–

GHz

0.3 0.4 pF

0.4 –

1.35 –

0.7 –

dB

0.9 –

1.4 –

2.5 2.9

14 –

9.8 –

9.8 –

160 –

mV

27 –

dBm

1)

S21e (k – √k 2– 1)

S12e

2)

S21e

S12e

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