BF422 데이터 시트보기 (PDF) - Infineon Technologies

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BF422

NPN Silicon Transistors With High Reverse Voltage

Infineon Technologies 

BF 420

BF 422

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

BF 422

Collector-emitter breakdown voltage

IC = 10 µA, RBE = 2.7 k

BF 420

Collector-base breakdown voltage

IC = 10 µA

BF 420

BF 422

Emitter-base breakdown voltage, IE = 10 µA

Collector cutoff current

VCB = 200 V

Collector cutoff current

VCE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C

Emitter cutoff current, VEB = 5 V

DC current gain

IC = 100 µA, VCE = 20 V

IC = 25 mA, VCE = 20 V

Collector-emitter saturation voltage1)

IC = 25 mA, Tj =150 ˚C

AC characteristics

Transition frequency

IC = 10 mA, VCE = 10 V, f = 20 MHz

Output capacitance

VCB = 30 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 250

–

V(BR)CER 300

–

V(BR)CB0

300 –

250 –

V(BR)EB0 5

–

ICB0

–

–

ICER

–

–

IEB0

–

–

hFE

15

–

50

–

VCEsatRF –

–

–

V

–

–

–

–

10 nA

10

µA

10

–

–

–

20 V

fT

–

Cobo

–

100 –

0.8 –

MHz

pF

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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