TIP35B 데이터 시트보기 (PDF) - Usha Ltd

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TIP35B

SILICON HIGH- POWER TRANSISTOR

Usha Ltd  

ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]

Characteristic

Symbol Min Typ Max Unit

* OFF CHARACTERISTICS :

Collector–Emitter Sustaining Voltage(1) VCEO(sus)

[ Ic =30 mAdc, IB = 0 ]

TIP35A

60

TIP35B

80

TIP35C

100

Collector Cutoff Current

[ VCE = 30 Vdc, IB = 0 ]

ICE0

TIP35A

TIP35B,TIP35C

Collector Cutoff Current

ICES

[ VCE =Rated VCEO,VBE = 0 ]

Vdc

mAdc

1.0

1.0

700 µAdc

Emitter –Base Cutoff Current

IEBO

[ VEB =5.0 Vdc , Ic = 0 ]

1 mAdc

* ON CHARACTERISTICS (1):

DC Current Gain

[ Ic = 1.5 Adc , VCE = 4.0 Vdc ]

[ Ic = 15Adc , VCE = 4.0 Vdc ]

Collector-Emitter Saturation Voltage

[ Ic = 15Adc , IB = 1.5Adc ]

[ Ic = 25Adc , IB = 5.0Adc ]

Base-Emitter on Voltage

[ Ic =15.0 Adc , VCE= 4V]

[ Ic =25.0 Adc , VCE= 4.0V]

DYNAMIC CHARACTERISTICS :

hFE

25

15

VCE(sat)

VBE(on)

---

75

1.8

Vdc

4.0

2.0

Vdc

4.0

Current Gain – Bandwidth Product

[Ic=1Adc,VCE=10Vdc,ftest=1.0 MHz ]

Small-Signal Current Gain

[ IC= 1 Adc, VCE=10 Vdc, f=1kHz]

fT

3

hfe

25

MHz

• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%

•

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