4N25GV 데이터 시트보기 (PDF) - Vishay Semiconductors

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4N25GV

Optocoupler with Phototransistor Output

Vishay Semiconductors 

4N25(G)V/ 4N35(G)V Series

Vishay Telefunken

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter

Forward voltage

Junction capacitance

Test Conditions

IF = 50 mA

Tamb = 100°C

VR = 0, f = 1 MHz

Symbol Min.

Typ.

Max.

Unit

VF

1.2

1.4

V

Cj

50

pF

Output (Detector)

Parameter

Collector emitter voltage

Emitter collector voltage

Collector emitter cut-off

current

Test Conditions

IC = 1 mA

IE = 100 mA

VCE = 10 V, IF = 0,

Tamb = 100°C

VCE = 30 V, IF = 0,

Tamb = 100°C

Symbol Min.

Typ.

Max.

Unit

VCEO

32

VECO

7

ICEO

V

V

50

nA

ICEO

500

mA

Coupler

Parameter

Test Conditions

Symbol Min.

Typ.

Max.

Unit

Collector emitter

saturation voltage

IF = 50 mA, IC = 2 mA

VCEsat

0.3

V

Cut-off frequency

W VCE = 5 V, IF = 10 mA,

RL = 100

fc

Coupling capacitance

f = 1 MHz

Ck

110

kHz

1

pF

Current Transfer Ratio (CTR)

Parameter

IC/IF

Test Conditions

VCE = 10 V, IF = 10 mA

VCE = 10 V, IF = 10 mA,

Tamb = 100°C

Type

4N25(G)V

4N35(G)V

4N35(G)V

Symbol Min. Typ. Max. Unit

CTR 0.20

1

CTR 1.00

1.5

CTR 0.40

88

Rev. A4, 11–Jan–99

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