CLP30-200B1(1999) 데이터 시트보기 (PDF) - STMicroelectronics

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CLP30-200B1
(Rev.:1999)

OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE

STMicroelectronics 

CLP30-200B1

ABSOLUTE MAXIMUM RATINGS (RSENSE = 3 Ω,Tamb = 25°C)

Symbol

IPP

ITSM

Tstg

Tj

TL

Parameter

Line to GND peak pulse current

10/1000 µs (open circuit voltage wave shape 10/1000 µs)

5/310 µs (open circuit voltage wave shape 10/700 µs)

Non repetitive surge peak on-state current

F = 50 Hz

tp = 10 ms

tp = 200 ms

tp = 1 s

Storage temperature range

Maximum junction temperature

Lead temperature for soldering during 10 s.

Value

30

45

8.5

4.5

3.5

-40 to +150

150

260

Unit

A

A

°C

°C

ELECTRICAL CHARACTERISTICS (RSENSE = 3 Ω, and Tamb = 25 °C)

Symbol

ILGL

VLG

VSWON

ISWOFF

ISWON

C

Parameter

Test condtions

Line to GND leakage current

VLG = 200 V

Measured between TIP (or

RING) and GND

Line to GND operating voltage

Line to GND voltage at SW1 or Measured at 50 Hz between TIPL

SW2 switching-on

(or RINGL) and GND,one cycle

Line to GND negative current Refer to test circuit fig 9

at SW1 or SW2 switching-off

Line current at SW1 or SW2

switching-on

Positive surge

Negative surge

Line to GND capacitance

VLG = 0V VOSC= 200mVRMS

F = 1MHz

Min Max

10

200

290

150

220 320

370 470

100

Unit

µA

V

V

mA

mA

pF

THERMAL RESISTANCE

Symbol

Rth(j-a)

Junction to ambient

Parameter

Value

170

Unit

°C/W

8/11

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