FDB4020P(1999) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB4020P
(Rev.:1999)
(Rev.:1999)
Fairchild Semiconductor
FDB4020P Datasheet PDF : 7 Pages
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Typical Characteristics (continued)
5
ID = -16A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
3
6
9
12
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
RDS(ON) LIMIT
100µs
1ms
10
10ms
DC 100ms
1
VGS = -4.5V
SINGLE PULSE
RθJC = 4oC/W
TA = 25oC
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1400
1200
1000
800
600
400
200
0
0
f = 1 MHz
VGS = 0 V
CISS
COSS
CRSS
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
800
600
SINGLE PULSE
RθJC = 4oC/W
TA = 25oC
400
200
0
0.0001
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
D = 0.5
0.1
0.2
0.2
0.05
Single Pulse
0.1
0.05
0.0001
0.001
0.01
0.1
t1, TIME (sec)
R θJC (t) = r(t) * R θJC
R θJC = 4°C/W
P(pk)
t1
t2
TJ - TA = P * R θJC (t)
Duty Cycle, D = t1 / t 2
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDP4020P Rev. A
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