FDS6576 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6576 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 12A
8
6
4
2
0
0
5
VDS = 10V
15V
20V
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100⼡
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RTJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3000
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
500
COSS
CRSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RTJA = 125Ⱌ /W
TA = 25Ⱌ
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA(t) = r(t) + RTJA
RTJA = 125 Ⱌ /W
P(pk)
t1
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6576 Rev E3
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