STM2DPFS30L 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STM2DPFS30L

P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8 STripFE™ MOSFET PLUS SCHOTTKY RECTIFIER

STMicroelectronics 

®

STM2DPFS30L

STripFET™P

- CHANNEL 30V - 0.145Ω - 2A MiniS0-8

MOSFET PLUS SCHOTTKY RECTIFIER

PRELIMINARY DATA

MAIN PRODUCT CHARACTERISTICS

MOSFET

V D SS

RDS(on )

30V <0.165Ω

SCHOTTKY

IF (AV)

VRRM

1A

40V

ID

2A

V F(M AX)

0. 5 5V

DESCRIPTION:

This product associates the latest low voltage

St ripFET™ in p-channel version to a low drop

Schottk y diode. Such configuration is extremely

versatile in implementing a large variety of DC-DC

convert ers for printers, portable equipment, and

cellular phones.

New MiniSO-8 package features:

s Half footprint area versus standard SO-8, for

application where minimum circuit board

space is necessary.

s Extremely low profile, ideal for low thickness

equipment.

MOSFET ABSOLUTE MAXIMUM RATINGS

S ym b o l

P ar ame te r

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gat e Voltage (RGS = 20 kΩ)

VGS

ID

ID

ID M( •)

Ptot

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

MiniSO-8

INTERNAL SCHEMATIC DIAGRAM

V alu e

30

30

± 20

2

1.3

8

1.25

Unit

V

V

V

A

A

A

W

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

V R RM

IF(RMS)

IF (AV)

Repetitive Peak Reverse Voltage

RMS Forward Current

Average Forward Current

Ta=60 oC

δ =0.5

IFSM Surge Non Repetit ive Forward Current

tp= 10 ms

Sinusoidal

dv/dt Critical Rate Of Rise Of Reverse Voltage

(•) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

July 1999

V alu e

40

2

1.2

5.5

10000

Un it

V

A

A

A

V/µs

1/6

Share Link: