STM2DPFS30L 데이터 시트보기 (PDF) - STMicroelectronics
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STM2DPFS30L
STMicroelectronics
STM2DPFS30L Datasheet PDF : 6 Pages
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STM2DPFS30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 15 V ID = 1.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig. 1)
VDD = 24 V ID = 3 A VGS = 5 V
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V ID = 1.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig. 1)
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 2 A VGS = 0
trr
Reverse
Time
Qrr
Reverse
Charge
Recovery ISD = 2 A
VDD = 15V
Recovery
I R RM
Reverse
Current
Recovery
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
14.5
37
Max.
19
48
Unit
ns
ns
5.5
nC
1.7
nC
1.8
nC
Min.
Typ.
88
23
Max.
Unit
ns
ns
Min.
Typ.
Max.
2
8
Unit
A
A
1.2
V
ns
t bd
nC
Α
SCHOTTKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l
IR(∗)
V F( ∗)
P ar am et e r
Test Conditions
Reversed
Current
Leakage TJ= 25 oC
TJ= 100 oC
VR=40V
V R=40V
Forward Voltage drop
TJ= 25 oC
TJ= 100 oC
TJ= 25 oC
TJ= 100 oC
IF=1A
I F=1A
IF=2A
I F=2A
Min.
Typ.
1.5
0.45
Max.
40
5
0.55
0.51
0.7
0.7
Unit
µA
mA
V
V
V
V
3/6
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