STD30PF03L-1 데이터 시트보기 (PDF) - STMicroelectronics

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STD30PF03L-1

P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD30PF03LT4 - STD30PF03L-1

2

Electrical characteristics

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

ID = 250 µA, VGS= 0

VDS=Max rating

VDS=Max rating,Tc=100 °C

VGS = ±16 V

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 12 A

VGS= 5 V, ID= 12 A

30

V

1 µA

10 µA

±100 nA

1

V

0.025 0.028 Ω

0.032 0.040 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs(1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =15 V, ID= 12 A

VDS =25 V, f=1MHz, VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=15 V, ID = 24 A

VGS =5 V

Figure 15

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

23

S

1670

pF

345

pF

120

pF

18.6 28 nC

5.5

nC

11

nC

Note:

For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed

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