FDG316P 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDG316P

P-Channel Logic Level PowerTrench® MOSFET

Fairchild Semiconductor 

December 2001

FDG316P

P-Channel Logic Level PowerTrench MOSFET

General Description

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Power Management

Features

• -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V

RDS(ON) = 0.30 Ω @ VGS = -4.5 V.

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely low

RDS(ON).

• Compact industry standard SC70-6 surface mount

package.

S

D

D

SC70-6

G

D

D

1

6

2

5

3

4

Absolute Maxim um Ratings T = 25°C unless otherwise noted

A

Symbol

VDSS

VGSS

ID

PD

TJ, Tstg

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.36

FDG316P

7’’

Ratings

-30

±20

-1.6

-6

0.75

0.48

-55 to +150

260

Tape Width

8mm

Units

V

V

A

W

°C

°C/W

Quantity

3000 units

2001 Fairchild Semiconductor Corporation

FDG316P Rev. D

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