2SJ353-T 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SJ353-T

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

DRAIN TO SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT

1

VGS = –10 V

0.8

0.6

TA = 75 ˚C

0.4

25 ˚C

–25 ˚C

0.2

0

–0.01

–0.1

–1

–10

ID - Drain Current - A

1 000

CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

500

Ciss

200

100

Coss

50

Crss

20

VGS = 0

f = 1 MHz

10

–1 –2

–5 –10 –20 –50

VDS - Drain to Source Voltage - V

–100

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

–10

–1

–0.1

–0.01

–0.001

0.2

0.4 0.6 0.8

1

1.2

VSD - Source to Drain Voltage - V

4

2SJ353

DRAIN TO SOURCE ON-STATE RESISTANCE

vs. GATE TO SOURCE VOLTAGE

1

0.8

ID = –0.8 A

0.6

–1.0 A

0.4

0.2

0

–4

–8

–12

–16

–20

VGS - Gate to Source Voltage - V

SWITCHING CHARACTERISTICS

100

50

tf

td(off)

tf

20

10

td(on)

5

2

1

–0.1 –0.2

VDD = –30 V

VGS(on) = –10 V

RG = 10 Ω

–0.5 –1 –2

–5 –10

ID - Drain Current - A

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