LPS200P70 데이터 시트보기 (PDF) - Filtronic PLC

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LPS200P70

PACKAGED LOW NOISE PHEMT

Filtronic PLC 

• FEATURES

♦ 0.7 dB Noise Figure at 12 GHz

♦ 12 dB Associated Gain at 12 GHz

♦ 0.6 dB Noise Figure at 2 GHz

♦ 14 dB Associated Gain at 2 GHz

♦ Low DC Power Consumption

LPS200P70

PACKAGED LOW NOISE PHEMT

• DESCRIPTION AND APPLICATIONS

The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an

Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom”

Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure

and processing have been optimized for high dynamic range. The LPS200’s active areas are

passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance

applications that require a surface-mount package.

Typical applications include low noise receiver preamplifiers for commercial applications including

Cellular/PCS systems and broad band commercial instrumentation.

• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C*

Parameter

Symbol

Test Conditions

Saturated Drain-Source Current** IDSS

VDS = 2 V; VGS = 0 V

Noise Figure

NF

Associated Gain at minimum NF

GA

Transconductance

GM

VDS = 2 V; IDS = 25% IDSS

VDS = 2 V; IDS = 25% IDSS

VDS = 2 V; VGS = 0 V

Gate-Source Leakage Current

IGSO

VGS = -3 V

Pinch-Off Voltage

VP

VDS = 2 V; IDS = 1 mA

*frequency=12 GHz, unless otherwise noted

**Formerly binned as: LPS200P70-1 = 15-30 mA and LPS200P70–2 = 31-50 mA

Min Typ Max Units

15

50 mA

0.7 1.3 dB

10.5 12

dB

60

80

mS

1

15 µA

-0.25 -0.8 -1.5

V

Phone: (408) 988-1845

Fax: (408) 970-9950

http:// www.filss.com

Revised: 1/20/01

Email: sales@filss.com

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